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C
HIVE INF
O
RMATI
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ARCHIVE INFORMATION
MRF9120LR3
3
Freescale Semiconductor
RF Product Device Data
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (1)
(In Freescale Test Fixture, 50 ohm system)
Two-Tone Common-Source Amplifier Power Gain
(VDD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 1000 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Gps
15
16.5
—
dB
Two-Tone Drain Efficiency
(VDD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 1000 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
η
36
39
—
%
3rd Order Intermodulation Distortion
(VDD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 1000 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IMD
—
-31
-28
dBc
Input Return Loss
(VDD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 1000 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IRL
—
-16
-9
dB
Two-Tone Common-Source Amplifier Power Gain
(VDD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 1000 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
Gps
—
16.5
—
dB
Two-Tone Drain Efficiency
(VDD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 1000 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
η
—
40.5
—
%
3rd Order Intermodulation Distortion
(VDD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 1000 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
IMD
—
-30
—
dBc
Input Return Loss
(VDD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 1000 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
IRL
—
-13
—
dB
Power Output, 1 dB Compression Point
(VDD
= 26 Vdc, P
out
= 120 W CW, I
DQ
= 1000 mA,
f1 = 880.0 MHz)
P1dB
—
120
—
W
Common-Source Amplifier Power Gain
(VDD
= 26 Vdc, P
out
= 120 W CW, I
DQ
= 1000 mA,
f1 = 880.0 MHz)
Gps
—
16
—
dB
Drain Efficiency
(VDD
= 26 Vdc, P
out
= 120 W CW, I
DQ
= 1000 mA,
f1 = 880.0 MHz)
η
—
51
—
%
Measurement made with device in push-pull configuration.
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